BCX70KLT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BCX70KLT1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 125 MHz
   Capacitancia de salida (Cc): 4.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

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BCX70KLT1 Datasheet (PDF)

6.1. Size:427K motorola
bcx70glt bcx70jlt bcx70klt.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX70GLT1/DBCX70GLT1General Purpose TransistorsNPN SiliconBCX70JLT1COLLECTOR3BCX70KLT11BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcCASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO 5.0

8.1. Size:75K fairchild semi
bcx70k.pdf

BCX70KGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

8.2. Size:125K nxp
bcx70g bcx70h bcx70j bcx70k.pdf

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

8.3. Size:20K samsung
bcx70k.pdf

BCX70K NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Refer to KS3904 for graphs Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Em

8.4. Size:467K secos
bcx70k.pdf

BCX70K NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Low Current 33Top View Low Voltage C B11 2Collector2K EDMARKING : AK H JF GBaseMillimeter MillimeterREF. REF.Min. Max. Min. Max.A 2.70 3.04 G - 0.18

8.5. Size:571K jiangsu
bcx70j bcx70k.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 BCX70J,BCX70K TRANSISTOR (NPN)FEATURES Low current1. BASE Low voltage2. EMITTER3. COLLECTORMARKING : BCX70JAJ, BCX70K:AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V

8.6. Size:10717K sprague
bcx70h bcx70j bcx70k bsr13 tmpc1009 tmpc1009 tmpc1009 tmpc1009 tmpc1009 tmpc1622 tmpc1622 tmpc1622 tmpc1623.pdf