All Transistors. BCX70KLT1 Datasheet

 

BCX70KLT1 Datasheet, Equivalent, Cross Reference Search


   Type Designator: BCX70KLT1
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 125 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23

 BCX70KLT1 Transistor Equivalent Substitute - Cross-Reference Search

   

BCX70KLT1 Datasheet (PDF)

 6.1. Size:427K  motorola
bcx70glt bcx70jlt bcx70klt.pdf

BCX70KLT1
BCX70KLT1

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby BCX70GLT1/DBCX70GLT1General Purpose TransistorsNPN SiliconBCX70JLT1COLLECTOR3BCX70KLT11BASE23EMITTERMAXIMUM RATINGS1Rating Symbol Value Unit2CollectorEmitter Voltage VCEO 45 VdcCollectorBase Voltage VCBO 45 VdcCASE 31808, STYLE 6SOT23 (TO236AB)EmitterBase Voltage VEBO 5.0

 8.1. Size:75K  fairchild semi
bcx70k.pdf

BCX70KLT1
BCX70KLT1

BCX70KGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Dissipation 350 mW TSTG Storag

 8.2. Size:125K  nxp
bcx70g bcx70h bcx70j bcx70k.pdf

BCX70KLT1
BCX70KLT1

DISCRETE SEMICONDUCTORS DATA SHEETBCX70 seriesNPN general purpose transistorsProduct data sheet 2004 Jan 16Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheetNPN general purpose transistors BCX70 seriesFEATURES PINNING Low current (max. 100 mA)PIN DESCRIPTION Low voltage (max. 45 V).1 base2 emitterAPPLICATIONS3 collector General purpos

 8.3. Size:20K  samsung
bcx70k.pdf

BCX70KLT1

BCX70K NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Refer to KS3904 for graphs Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 V Collector Current IC 200 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Em

 8.4. Size:467K  secos
bcx70k.pdf

BCX70KLT1
BCX70KLT1

BCX70K NPN Silicon Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Low Current 33Top View Low Voltage C B11 2Collector2K EDMARKING : AK H JF GBaseMillimeter MillimeterREF. REF.Min. Max. Min. Max.A 2.70 3.04 G - 0.18

 8.5. Size:571K  jiangsu
bcx70j bcx70k.pdf

BCX70KLT1
BCX70KLT1

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate TransistorsSOT-23 BCX70J,BCX70K TRANSISTOR (NPN)FEATURES Low current1. BASE Low voltage2. EMITTER3. COLLECTORMARKING : BCX70JAJ, BCX70K:AK MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NSV1C301CT

 

 
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