BD131A Todos los transistores

 9.1. Size:49K  philips
 bd131.pdf

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mount

 9.2. Size:96K  comset
 bd131-bd132.pdf

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 45 V -VCBO Collector-Base Voltage 45 V -VEBO Emitter-Base Voltage 4 V Symbol Ratings Value Unit -IC 3 IC

 9.3. Size:142K  cdil
 bd131 bd132.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN BD131 PNP BD132 TO-126 Plastic Package E C B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD131 BD132 UNIT Collector -Base Voltage VCBO V 70 45 Collector -Emitter Voltage VCEO V 45 45 Emitter-Base Voltage

 9.4. Size:207K  inchange semiconductor
 bd131.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD131 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 45V(Min.) (BR)CEO Complement to type BD132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power and general purpose applications. ABSOLUTE