DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD131NPN power transistor1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistor BD131FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mount

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORSThe BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 45 V-VCBO Collector-Base Voltage 45 V-VEBO Emitter-Base Voltage 4 VSymbol Ratings Value Unit-IC 3 IC

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORSNPNBD131PNPBD132TO-126 Plastic PackageECBGeneral Purpose Medium Power ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD131 BD132 UNITCollector -Base Voltage VCBO V70 45Collector -Emitter Voltage VCEO V45 45Emitter-Base Voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD131DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage -: V = 45V(Min.)(BR)CEOComplement to type BD132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power and general purposeapplications.ABSOLUTE