All Transistors. BD131A Datasheet

 

BD131A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD131A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 11 W
   Maximum Collector-Base Voltage |Vcb|: 75 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO126

 BD131A Transistor Equivalent Substitute - Cross-Reference Search

   

BD131A Datasheet (PDF)

 9.1. Size:49K  philips
bd131.pdf

BD131A
BD131A

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD131NPN power transistor1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistor BD131FEATURES PINNING High current (max. 3 A)PIN DESCRIPTION Low voltage (max. 45 V).1 emitter2 collector, connected to metal part ofAPPLICATIONS mount

 9.2. Size:96K  comset
bd131-bd132.pdf

BD131A
BD131A

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORSThe BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit-VCEO Collector-Emitter Voltage 45 V-VCBO Collector-Base Voltage 45 V-VEBO Emitter-Base Voltage 4 VSymbol Ratings Value Unit-IC 3 IC

 9.3. Size:142K  cdil
bd131 bd132.pdf

BD131A
BD131A

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySILICON EPITAXIAL POWER TRANSISTORSNPNBD131PNPBD132TO-126 Plastic PackageECBGeneral Purpose Medium Power ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD131 BD132 UNITCollector -Base Voltage VCBO V70 45Collector -Emitter Voltage VCEO V45 45Emitter-Base Voltage

 9.4. Size:207K  inchange semiconductor
bd131.pdf

BD131A
BD131A

INCHANGE Semiconductorisc Silicon NPN Power Transistor BD131DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage -: V = 45V(Min.)(BR)CEOComplement to type BD132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power and general purposeapplications.ABSOLUTE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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