BD131A PDF and Equivalents Search

 

BD131A Specs and Replacement

Type Designator: BD131A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 11 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 BD131A Substitution

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BD131A datasheet

 9.1. Size:49K  philips

bd131.pdf pdf_icon

BD131A

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD131 NPN power transistor 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistor BD131 FEATURES PINNING High current (max. 3 A) PIN DESCRIPTION Low voltage (max. 45 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mount... See More ⇒

 9.2. Size:96K  comset

bd131-bd132.pdf pdf_icon

BD131A

PNP BD132 NPN BD131 SILICON PLANAR EPITAXIAL POWER TRANSISTORS The BD132are PNN transistors mounted in Jedec TO-126 plastic package. Medium power applications. NPN complements are BD131 . ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit -VCEO Collector-Emitter Voltage 45 V -VCBO Collector-Base Voltage 45 V -VEBO Emitter-Base Voltage 4 V Symbol Ratings Value Unit -IC 3 IC... See More ⇒

 9.3. Size:142K  cdil

bd131 bd132.pdf pdf_icon

BD131A

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON EPITAXIAL POWER TRANSISTORS NPN BD131 PNP BD132 TO-126 Plastic Package E C B General Purpose Medium Power Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD131 BD132 UNIT Collector -Base Voltage VCBO V 70 45 Collector -Emitter Voltage VCEO V 45 45 Emitter-Base Voltage ... See More ⇒

 9.4. Size:207K  inchange semiconductor

bd131.pdf pdf_icon

BD131A

INCHANGE Semiconductor isc Silicon NPN Power Transistor BD131 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage - V = 45V(Min.) (BR)CEO Complement to type BD132 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power and general purpose applications. ABSOLUTE ... See More ⇒

Detailed specifications: BD124, BD124A, BD127, BD128, BD129, BD130, BD130Y, BD131, 431, BD132, BD132A, BD133, BD135, BD135-10, BD135-16, BD135-6, BD135G

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