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BD137 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD137

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

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BD137 Datasheet (PDF)

1.1. bd135 bd137 bd139.pdf Size:100K _motorola

BD137
BD137

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with BD 136,

1.2. bd135 bd137 bd139 3.pdf Size:49K _philips

BD137
BD137

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal pa

1.3. bd135 bd137 bd139.pdf Size:44K _st

BD137
BD137

BD135 BD137/BD139 NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1 2 BD138 and BD140. 3 SOT-32 INTERNAL SCHEMATIC DI

1.4. bd135 bd137 bd139.pdf Size:41K _fairchild_semi

BD137
BD137

BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135 45 V

1.5. bd135 bd137 bd139.pdf Size:51K _samsung

BD137
BD137

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Base E

1.6. bd137.pdf Size:109K _utc

BD137
BD137

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS ? FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 TO-126 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD137L-xx-T60-K BD137G-xx-T60-K TO-126 E C B Bulk BD137L-xx-T60-K (1) K: Bulk (1)Packing Type (2) T60: TO-126 (2)Package T

1.7. bd135-bd137-bd139.pdf Size:80K _secos

BD137
BD137

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE (1) A Product-Rank BD135-6 BD135-10 BD135-16 B E F Product-Rank BD137-6

1.8. bd135 bd137 bd139.pdf Size:246K _cdil

BD137
BD137

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

1.9. bd135 bd137 bd139.pdf Size:117K _inchange_semiconductor

BD137
BD137

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD136/138/140 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION BD135 BD137 BD139 Ў¤ Absolute maximum ratings (Ta=2

1.10. bd135 bd137 bd139.pdf Size:329K _wietron

BD137
BD137

BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25?C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 ?C Junctio

1.11. stbd135t stbd137t stbd139t.pdf Size:454K _semtech

BD137
BD137

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B • TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 KΩ) VCER 45 60 100 V Collector Base Vo

1.12. hsbd137.pdf Size:118K _shantou-huashan

BD137

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD137 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature………………………… -55~150℃ Tj——Junction Temperature……………………………… 150℃ PC——Collector Dissipation(Tc=25℃)…

Otros transistores... BD135-16 , BD135-6 , BD135G , BD136 , BD136-10 , BD136-16 , BD136-6 , BD136G , 2N2222A , BD137-10 , BD137-16 , BD137-6 , BD137G , BD138 , BD138-10 , BD138-6 , BD138G .

 


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