BD137 - описание и поиск аналогов

Order this document MOTOROLA by BD135/D SEMICONDUCTOR TECHNICAL DATA BD135 BD137 Plastic Medium Power Silicon BD139 NPN Transistor . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. 1.5 AMPERE POWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc NPN SILICON BD 135, 137, 139 are complementary with

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD135; BD137; BD139 NPN power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification NPN power transistors BD135; BD137; BD139 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to m

BD135 BD137/BD139 NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The BD135, BD137 and BD139 are silicon epitaxial planar NPN transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. The complementary PNP types are the BD136 1 2 BD138 and BD140. 3 SOT-32 INTERNAL SCHEMATIC

BD135/137/139 Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD135 45 V BD137 60 V BD139 80 V VCEO Collector-Emitter Voltage BD135

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND TO-126 SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD135 VCBO 45 V BD137 60 V BD139 80 V Collector Emitter Voltage BD135 VCEO 45 V BD137 60 V BD139 80 V 1. Emitter 2.Collector 3.Bas

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method BD13516S BD135-16 Bulk BD1356STU BD135-6 BD13510STU BD135-10 BD13516STU BD135-16 Rail BD13716STU BD137-16 BD13710

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1 TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD137L-xx-T60-K BD137G-xx-T60-K TO-126 E C B Bulk BD137L-xx-T60-K (1) K Bulk (1)Packing Type (2) T60 TO-126 (2)Pa

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137 BD139 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD136, BD138, BD140 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD135 BD137 BD139 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD135 / BD137 / BD139 TRANSISTOR (NPN) TO 126 FEATURES 1. EMITTER High Current Complement To BD136, BD138 And BD140 2. COLLECTOR 3. BASE Equivalent Circuit BD135 BD137 BD139 XX XX XX BD135,BD137,BD139=Device code Solid dot = Green molding compound device, if none,

BD135/BD137/BD139(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(1.5A) Low Voltage(80V) 2.500 7.400 Dimensions in inches and (millimeters) 2.900 1.100 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.800 1.500 Va3.900 lue 3.000 Symbol Parameter 4.100 Units 3.200 BD135 BD137 BD139 10.600 0.000 11.000 0

BD135/137/139 NPN Epitaxial Planar Transistors 1. EMITTER 2. COLLECTOR P b Lead(Pb)-Free 3. BASE 1 2 3 TO-126 ABSOLUTE MAXIMUM RATINGS(TA=25 C) Rating Symbol BD135 BD137 BD139 Unit VCBO 45 60 80 V Collector-Emitter Voltage VCEO 45 60 80 V Collector-Base Voltage VEBO Emitter-Base Voltage 5.0 5.0 5.0 V Collector Current IC 1.5 A PD 1.25 W Power Disspation Tj 150 C Ju

isc Silicon NPN Power Transistor BD137 DESCRIPTION DC Current Gain- h = 40(Min)@ I = 0.15A FE C Collector-Emitter Sustaining Voltage - V = 60V(Min) CEO(SUS) Complement to type BD138 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complementary or quasi complement

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (T

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium-power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http //onsemi.com Features 1.5 A POWER TRANSISTORS High DC Current Gain NPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features Complement to BD136, BD138 and BD140 respectively Applications Medium Power Linear and Switching TO-126 1 1. Emitter 2.Collector 3.Base Ordering Information Part Number Marking Package Packing Method BD13516S BD135-16 Bulk BD1356STU BD135-6 BD13510STU BD135-10 BD13516STU BD135-16 Rail BD13716STU BD137-16 BD13710

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1 1 1 2Collector 2 2 2 3Base 3 3 3 CLASSIFICATION OF hFE (1) A Product-Rank BD135-6 BD135-10 BD135-16 B E F Product-Rank BD13

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 K ) VCER 45 60 100 V Collector Base Vo