BD137 Datasheet and Replacement

Order this documentMOTOROLAby BD135/DSEMICONDUCTOR TECHNICAL DATABD135BD137Plastic Medium Power SiliconBD139NPN Transistor. . . designed for use as audio amplifiers and drivers utilizing complementary or quasicomplementary circuits.1.5 AMPEREPOWER TRANSISTORS DC Current Gain hFE = 40 (Min) @ IC = 0.15 AdcNPN SILICON BD 135, 137, 139 are complementary with

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D100BD135; BD137; BD139NPN power transistors1999 Apr 12Product specificationSupersedes data of 1997 Mar 04Philips Semiconductors Product specificationNPN power transistors BD135; BD137; BD139FEATURES PINNING High current (max. 1.5 A)PIN DESCRIPTION Low voltage (max. 80 V).1 emitter2 collector, connected to m

BD135BD137/BD139NPN SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPESDESCRIPTIONThe BD135, BD137 and BD139 are siliconepitaxial planar NPN transistors in Jedec SOT-32plastic package, designed for audio amplifiersand drivers utilizing complementary or quasicompementary circuits.The complementary PNP types are the BD13612BD138 and BD140.3SOT-32INTERNAL SCHEMATIC

BD135/137/139Medium Power Linear and Switching Applications Complement to BD136, BD138 and BD140 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD135 45 V : BD137 60 V : BD139 80 V VCEO Collector-Emitter Voltage : BD135

BD135/137/139 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD136, BD138 and BD140 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD135 VCBO 45 V : BD137 60 V : BD139 80 V Collector Emitter Voltage : BD135 VCEO 45 V : BD137 60 V : BD139 80 V 1. Emitter 2.Collector 3.Bas

BD135 / 137 / 139NPN Epitaxial Silicon TransistorFeatures Complement to BD136, BD138 and BD140 respectivelyApplications Medium Power Linear and SwitchingTO-12611. Emitter 2.Collector 3.BaseOrdering InformationPart Number Marking Package Packing MethodBD13516S BD135-16 BulkBD1356STU BD135-6BD13510STU BD135-10BD13516STU BD135-16 RailBD13716STU BD137-16BD13710

UNISONIC TECHNOLOGIES CO., LTD BD137 NPN SILICON TRANSISTOR NPN POWER TRANSISTORS FEATURES * High current (max.1.5A) * Low voltage (max.60V) 1TO-126 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 BD137L-xx-T60-K BD137G-xx-T60-K TO-126 E C B BulkBD137L-xx-T60-K(1) K: Bulk(1)Packing Type(2) T60: TO-126(2)Pa

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTORS BD135 BD137BD139TO126 Plastic PackageECBDesigned for use as Audio Amplifier and Drivers UtilizingComplementary BD136, BD138, BD140ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD135 BD137 BD139 UNITCollector -Emitter Voltage VCEO 45 60 80 VCol

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate TransistorsBD135 / BD137 / BD139 TRANSISTOR (NPN)TO 126 FEATURES 1. EMITTER High Current Complement To BD136, BD138 And BD140 2. COLLECTOR3. BASE Equivalent Circuit BD135 BD137 BD139 XX XX XXBD135,BD137,BD139=Device code Solid dot = Green molding compound device, if none,

BD135/BD137/BD139(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features High Current(1.5A) Low Voltage(80V) 2.5007.400 Dimensions in inches and (millimeters)2.9001.100MAXIMUM RATINGS (TA=25 unless otherwise noted ) 7.8001.500Va3.900lue 3.000Symbol Parameter 4.100 Units 3.200BD135 BD137 BD13910.6000.00011.0000

BD135/137/139NPN Epitaxial Planar Transistors1. EMITTER2. COLLECTORP b Lead(Pb)-Free3. BASE123TO-126ABSOLUTE MAXIMUM RATINGS(TA=25C)Rating Symbol BD135 BD137 BD139 UnitVCBO45 60 80 VCollector-Emitter VoltageVCEO45 60 80 VCollector-Base VoltageVEBOEmitter-Base Voltage 5.0 5.0 5.0 VCollector Current IC1.5 APD1.25 WPower DisspationTj150 CJu

isc Silicon NPN Power Transistor BD137DESCRIPTIONDC Current Gain-: h = 40(Min)@ I = 0.15AFE CCollector-Emitter Sustaining Voltage -: V = 60V(Min)CEO(SUS)Complement to type BD138Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complement

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD135 BD137 BD139 DESCRIPTION With TO-126 package High current Complement to type BD136/138/140 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings (T

BD135G, BD137G, BD139GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.http://onsemi.comFeatures1.5 A POWER TRANSISTORS High DC Current GainNPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

BD135G, BD137G, BD139GPlastic Medium-PowerSilicon NPN TransistorsThis series of plastic, medium-power silicon NPN transistors aredesigned for use as audio amplifiers and drivers utilizingcomplementary or quasi complementary circuits.http://onsemi.comFeatures1.5 A POWER TRANSISTORS High DC Current GainNPN SILICON BD 135, 137, 139 are complementary with BD 136, 138, 14

BD135 / 137 / 139NPN Epitaxial Silicon TransistorFeatures Complement to BD136, BD138 and BD140 respectivelyApplications Medium Power Linear and SwitchingTO-12611. Emitter 2.Collector 3.BaseOrdering InformationPart Number Marking Package Packing MethodBD13516S BD135-16 BulkBD1356STU BD135-6BD13510STU BD135-10BD13516STU BD135-16 RailBD13716STU BD137-16BD13710

BD135 / BD137 / BD139 NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-126 High current Complement to BD136, BD138 and BD140 1Emitter 1112Collector 2223Base 333CLASSIFICATION OF hFE (1) AProduct-Rank BD135-6 BD135-10 BD135-16 BEFProduct-Rank BD13

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139TCollector Emitter Voltage VCEO 45 60 80 VCollector Emitter Voltage ( RBE = 1 K) VCER 45 60 100 VCollector Base Vo

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD137 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150TjJunction Temperature 150PCCollector DissipationTc=25