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BD140G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD140G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 12 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 50 MHz

Ganancia de corriente contínua (hfe): 40

Empaquetado / Estuche: TO126

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BD140G Datasheet (PDF)

5.1. bd136 bd138 bd140-10.pdf Size:104K _motorola

BD140G
BD140G

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

5.2. bd136 bd138 bd140.pdf Size:104K _motorola

BD140G
BD140G

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POWER TRANSI

 5.3. bd136 bd138 bd140.pdf Size:49K _philips

BD140G
BD140G

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part

5.4. bd136 bd138 bd140.pdf Size:44K _st

BD140G
BD140G

BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 INTE

 5.5. bd135 bd136 bd139 bd140.pdf Size:155K _st

BD140G
BD140G

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN types are

5.6. bd136 bd138 bd140.pdf Size:41K _fairchild_semi

BD140G
BD140G

BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage : BD136 - 45 V : BD138 - 60 V : BD140 - 80 V VCEO Collector-Emitter Voltage : BD136

5.7. bd136 bd138 bd140.pdf Size:175K _cdil

BD140G
BD140G

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Collec

5.8. bd140.pdf Size:31K _kec

BD140G
BD140G

SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E ·High Current. (Max. : -1.5A) F ·DC Current Gain : hFE=40Min. @IC=-0.15A ·Complementary to BD139. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D Φ3.2 0.1 MAXIMUM RATING (Ta=25℃) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9

5.9. bd136 bd138 bd140.pdf Size:119K _inchange_semiconductor

BD140G
BD140G

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High current Ў¤ Complement to type BD135/137/139 APPLICATIONS Ў¤ Driver stages in high-fidelity amplifiers and television circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base BD136 BD138 BD140 Ў¤ Absolute maximum ratings (Ta=2

5.10. stbd136t stbd138t stbd140t.pdf Size:367K _semtech

BD140G
BD140G

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur

5.11. hsbd140.pdf Size:62K _shantou-huashan

BD140G
BD140G

PNP SILICON TRANSIST OR Shantou Huashan Electronic Devices Co.,Ltd. HSBD140 █ APPLICATIONS Medium Power Linear switching Applications █ ABSOLUTE MAXIMUM RATINGS(Ta=25℃) Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ 150℃ PC——Collector Dissipation(Tc=25℃)⋯⋯⋯⋯⋯

Otros transistores... BD139-10 , BD139-16 , BD139-6 , BD139G , BD140 , BD140-10 , BD140-16 , BD140-6 , 8550 , BD141 , BD142 , BD142-4 , BD142-5 , BD142-6 , BD142-7 , BD144 , BD145 .

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