BD140G - описание и поиск аналогов

 

BD140G. Аналоги и основные параметры

Наименование производителя: BD140G

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 12.5 W

Макcимально допустимое напряжение коллектор-база (Ucb): 100 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1.5 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 50 MHz

Статический коэффициент передачи тока (hFE): 40

Корпус транзистора: TO126

 Аналоги (замена) для BD140G

- подборⓘ биполярного транзистора по параметрам

 

BD140G даташит

 ..1. Size:173K  onsemi
bd136g bd138g bd140g.pdfpdf_icon

BD140G

BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. www.onsemi.com Features High DC Current Gain 1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON

 9.1. Size:104K  motorola
bd136 bd138 bd140-10 bd136 bd138 bd140.pdfpdf_icon

BD140G

Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POW

 9.2. Size:49K  philips
bd136 bd138 bd140.pdfpdf_icon

BD140G

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to met

 9.3. Size:141K  st
bd135 bd135-16 bd136 bd136-16 bd139 bd139-10 bd139-16 bd140 bd140-10 bd140-16.pdfpdf_icon

BD140G

BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ

Другие транзисторы: BD139-10, BD139-16, BD139-6, BD139G, BD140, BD140-10, BD140-16, BD140-6, 13007, BD141, BD142, BD142-4, BD142-5, BD142-6, BD142-7, BD144, BD145

 

 

 

 

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