BD140G Specs and Replacement
Type Designator: BD140G
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
- BJT ⓘ Cross-Reference Search
BD140G datasheet
..1. Size:173K onsemi
bd136g bd138g bd140g.pdf 
BD136G, BD138G, BD140G Plastic Medium-Power Silicon PNP Transistors This series of plastic, medium-power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. www.onsemi.com Features High DC Current Gain 1.5 A POWER TRANSISTORS BD 136, 138, 140 are complementary with BD 135, 137, 139 PNP SILICON ... See More ⇒
9.1. Size:104K motorola
bd136 bd138 bd140-10 bd136 bd138 bd140.pdf
Order this document MOTOROLA by BD136/D SEMICONDUCTOR TECHNICAL DATA BD136 BD138 Plastic Medium Power Silicon BD140 PNP Transistor BD140-10 . . . designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. DC Current Gain hFE = 40 (Min) @ IC = 0.15 Adc 1.5 AMPERE BD 136, 138, 140 are complementary with BD 135, 137, 139 POW... See More ⇒
9.2. Size:49K philips
bd136 bd138 bd140.pdf
DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D100 BD136; BD138; BD140 PNP power transistors 1999 Apr 12 Product specification Supersedes data of 1997 Mar 26 Philips Semiconductors Product specification PNP power transistors BD136; BD138; BD140 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to met... See More ⇒
9.3. Size:141K st
bd135 bd135-16 bd136 bd136-16 bd139 bd139-10 bd139-16 bd140 bd140-10 bd140-16.pdf
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ... See More ⇒
9.4. Size:44K st
bd136 bd138 bd140.pdf
BD136 BD138/BD140 PNP SILICON TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES PNP TRANSISTOR DESCRIPTION The BD136, BD138 and BD140 are silicon epitaxial planar PNP transistors in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi compementary circuits. 1 2 The complementary NPN types are the BD135 3 BD137 and BD139. SOT-32 I... See More ⇒
9.5. Size:74K st
bd136 bd136-10 bd136-16 bd138 bd140 bd140-10 bd140-16.pdf
BD136 BD138/BD140 PNP SILICON TRANSISTORS Type Marking BD136 BD136 BD136-10 BD136-10 BD136-16 BD136-16 BD138 BD138 BD140 BD140 BD140-10 BD140-10 1 BD140-16 BD140-16 2 3 STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTOR SOT-32 DESCRIPTION The BD136, BD138 and BD140 are silicon Epitaxial Planar PNP transistors mounted in Jedec SOT-32 plastic package, designed for... See More ⇒
9.6. Size:155K st
bd135 bd136 bd139 bd140.pdf
BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features Products are pre-selected in DC current gain Application General purpose 1 2 3 Description SOT-32 These epitaxial planar transistors are mounted in the SOT-32 plastic package. They are designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The NPN typ... See More ⇒
9.7. Size:41K fairchild semi
bd136 bd138 bd140.pdf
BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage ... See More ⇒
9.8. Size:40K onsemi
bd136 bd138 bd140.pdf
BD136/138/140 Medium Power Linear and Switching Applications Complement to BD135, BD137 and BD139 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD136 - 45 V BD138 - 60 V BD140 - 80 V VCEO Collector-Emitter Voltage ... See More ⇒
9.10. Size:175K cdil
bd136 bd138 bd140.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP EPITAXIAL SILICON POWER TRANSISTORS BD136 BD138 BD140 TO126 Plastic Package E C B Designed for use as Audio Amplifier and Drivers Utilizing Complementary BD135, BD137, BD139 ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD136 BD138 BD140 UNIT Collector -Emitter Voltage VCEO 45 60 80 V Col... See More ⇒
9.11. Size:437K jiangsu
bd136 bd138 bd140.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD136 / BD138 / BD140 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER High Current Complement To BD135, BD137 And BD139 2. COLLECTOR 3. BASE Equivalent Circuit Equivalent Circuit BD136 BD138 BD140 XX XX XX BD136,BD138,BD140=Device code Solid dot = Green molding compo... See More ⇒
9.12. Size:31K kec
bd140.pdf
SEMICONDUCTOR BD140 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A B D C FEATURES E High Current. (Max. -1.5A) F DC Current Gain hFE=40Min. @IC=-0.15A Complementary to BD139. G H DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 MAXIMUM RATING (Ta=25 ) E 3.5 _ + F 11.0 0.3 CHARACTERISTIC SYMBOL RATING UNIT G 2.9... See More ⇒
9.13. Size:167K lge
bd136 bd138 bd140.pdf
BD136/BD138/BD140(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features High Current(-1.5A) Low Voltage(-80V) Dimensions in inches and (millimeters) 2.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 7.400 2.900 1.100 7.800 1.500 Units Value 3.900 3.000 Symbol Parameter 4.100 3.200 BD135 BD137 BD139 10.600 0.000 11.000 ... See More ⇒
9.14. Size:367K semtech
stbd136t stbd138t stbd140t.pdf
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur... See More ⇒
9.17. Size:215K inchange semiconductor
bd140.pdf
INCHANGE Semiconductor isc Silicon PNP Power Transistor BD140 DESCRIPTION DC Current Gain- h = 63(Min)@ I = -0.15A FE C Collector-Emitter Sustaining Voltage - V = -80V(Min) CEO(SUS) Complement to type BD139 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as audio amplifiers and drivers utilizing complem... See More ⇒
9.18. Size:119K inchange semiconductor
bd136 bd138 bd140.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION With TO-126 package High current Complement to type BD135/137/139 APPLICATIONS Driver stages in high-fidelity amplifiers and television circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta... See More ⇒
Detailed specifications: BD139-10
, BD139-16
, BD139-6
, BD139G
, BD140
, BD140-10
, BD140-16
, BD140-6
, 13007
, BD141
, BD142
, BD142-4
, BD142-5
, BD142-6
, BD142-7
, BD144
, BD145
.
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