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BD157 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD157
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 275 V
   Tensión colector-emisor (Vce): 250 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO126
     - Selección de transistores por parámetros

 

BD157 Datasheet (PDF)

 ..1. Size:100K  motorola
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BD157

Order this documentMOTOROLAby BD157/DSEMICONDUCTOR TECHNICAL DATABD157BD158Plastic Medium Power NPNBD159Silicon Transistor. . . designed for power output stages for television, radio, phonograph and otherconsumer product applications. 0.5 AMPEREPOWER TRANSISTORS Suitable for Transformerless, LineOperated EquipmentNPN SILICON Thermopad{ Construction Provides

 ..2. Size:38K  fairchild semi
bd157 bd158 bd159.pdf pdf_icon

BD157

BD157/158/159Low Power Fast Switching Output Stages For T.V Radio Audio Output AmplifiersTO-12611. Emitter 2.Collector 3.BaseNPN Epitxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300

 ..3. Size:85K  cdil
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BD157

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158TO-126Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD157 BD158 UNITCollector -Emitter Voltage VCEO 250 300 VCollector -Base Voltage VCBO

 ..4. Size:205K  inchange semiconductor
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BD157

isc Silicon NPN Power Transistor BD157DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30~240(Min) @ I = 50mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power output stages for television, radio,phonograph and other consumer product applications.ABSOL

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: ZTX4403K | HA7631 | CMXT2207

 

 
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