BD157 Todos los transistores

 

BD157 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD157

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 275 V

Tensión colector-emisor (Vce): 250 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO126

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BD157 datasheet

 ..1. Size:100K  motorola
bd157 bd158 bd159.pdf pdf_icon

BD157

Order this document MOTOROLA by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 Plastic Medium Power NPN BD159 Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS Suitable for Transformerless, Line Operated Equipment NPN SILICON Thermopad Construction Provides

 ..2. Size:38K  fairchild semi
bd157 bd158 bd159.pdf pdf_icon

BD157

BD157/158/159 Low Power Fast Switching Output Stages For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD157 275 V BD158 325 V BD159 375 V VCEO Collector-Emitter Voltage BD157 250 V BD158 300

 ..3. Size:85K  cdil
bd157 bd158.pdf pdf_icon

BD157

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD157 BD158 UNIT Collector -Emitter Voltage VCEO 250 300 V Collector -Base Voltage VCBO

 ..4. Size:205K  inchange semiconductor
bd157.pdf pdf_icon

BD157

isc Silicon NPN Power Transistor BD157 DESCRIPTION Collector Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC Current Gain- h = 30 240(Min) @ I = 50mA FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOL

Otros transistores... BD152 , BD153 , BD154 , BD1540 , BD155 , BD1550 , BD156 , BD1560 , TIP127 , BD158 , BD159 , BD160 , BD161 , BD162 , BD163 , BD165 , BD166 .

 

 

 

 

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