BD157 Datasheet and Replacement

Order this documentMOTOROLAby BD157/DSEMICONDUCTOR TECHNICAL DATABD157BD158Plastic Medium Power NPNBD159Silicon Transistor. . . designed for power output stages for television, radio, phonograph and otherconsumer product applications. 0.5 AMPEREPOWER TRANSISTORS Suitable for Transformerless, LineOperated EquipmentNPN SILICON Thermopad{ Construction Provides

BD157/158/159Low Power Fast Switching Output Stages For T.V Radio Audio Output AmplifiersTO-12611. Emitter 2.Collector 3.BaseNPN Epitxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD157 275 V : BD158 325 V : BD159 375 V VCEO Collector-Emitter Voltage : BD157 250 V : BD158 300

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158TO-126Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications.ABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL BD157 BD158 UNITCollector -Emitter Voltage VCEO 250 300 VCollector -Base Voltage VCBO

isc Silicon NPN Power Transistor BD157DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30~240(Min) @ I = 50mAFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power output stages for television, radio,phonograph and other consumer product applications.ABSOL