BD157 - описание и поиск аналогов

Order this document MOTOROLA by BD157/D SEMICONDUCTOR TECHNICAL DATA BD157 BD158 Plastic Medium Power NPN BD159 Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS Suitable for Transformerless, Line Operated Equipment NPN SILICON Thermopad Construction Provides

BD157/158/159 Low Power Fast Switching Output Stages For T.V Radio Audio Output Amplifiers TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD157 275 V BD158 325 V BD159 375 V VCEO Collector-Emitter Voltage BD157 250 V BD158 300

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN PLASTIC MEDIUM POWER SILICON TRANSISTORS BD157, BD158 TO-126 Designed For Power Output Stages for Television, Radio, Phonograph And Other Consumer Applications. ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD157 BD158 UNIT Collector -Emitter Voltage VCEO 250 300 V Collector -Base Voltage VCBO

isc Silicon NPN Power Transistor BD157 DESCRIPTION Collector Emitter Sustaining Voltage- V = 250V(Min) CEO(SUS) DC Current Gain- h = 30 240(Min) @ I = 50mA FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power output stages for television, radio, phonograph and other consumer product applications. ABSOL