BD231 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD231
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 100 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 125 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO126
Búsqueda de reemplazo de BD231
BD231 PDF detailed specifications
bd231.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD231 PNP power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor BD231 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mou... See More ⇒
bd231.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD231 DESCRIPTION With TO-126 package Complement to type BD230 High current (Max -1.5A) Low voltage (Max -80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PAR... See More ⇒
bd227 bd229 bd231.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V ... See More ⇒
Otros transistores... BD229 , BD229-10 , BD229-16 , BD229-6 , BD230 , BD230-10 , BD230-16 , BD230-6 , 2SC5198 , BD231-10 , BD231-16 , BD231-6 , BD232 , BD232G , BD233 , BD233-10 , BD233-16 .
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