BD231 Datasheet. Specs and Replacement

Type Designator: BD231  📄📄 

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

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BD231 datasheet

 ..1. Size:49K  philips

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BD231

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD231 PNP power transistor 1999 Apr 21 Product specification Supersedes data of 1997 Mar 04 Philips Semiconductors Product specification PNP power transistor BD231 FEATURES PINNING High current (max. 1.5 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 emitter 2 collector, connected to metal part of APPLICATIONS mou... See More ⇒

 ..2. Size:117K  inchange semiconductor

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BD231

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD231 DESCRIPTION With TO-126 package Complement to type BD230 High current (Max -1.5A) Low voltage (Max -80V) APPLICATIONS Drive stage in TV circuits PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PAR... See More ⇒

 ..3. Size:142K  inchange semiconductor

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BD231

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor BD227/229/231 DESCRIPTION DC Current Gain- hFE= 40(Min)@ IC= -0.15A Complement to Type BD226/228/230 APPLICATIONS Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT BD227 -45 VCBO Collector-Base Voltage BD229 -60 V ... See More ⇒

Detailed specifications: BD229, BD229-10, BD229-16, BD229-6, BD230, BD230-10, BD230-16, BD230-6, 2SC5198, BD231-10, BD231-16, BD231-6, BD232, BD232G, BD233, BD233-10, BD233-16

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