BD250F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD250F
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 125 W
Tensión colector-base (Vcb): 200 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 40 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 15
Paquete / Cubierta: TO218
Búsqueda de reemplazo de transistor bipolar BD250F
BD250F Datasheet (PDF)
bd250-a-b-c.pdf
BD250, BD250A, BD250B, BD250CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE(TOP VIEW)BD249 Series 125 W at 25C Case TemperatureB1 25 A Continuous Collector CurrentC 2 40 A Peak Collector Current Customer-Specified Selections Available3EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute ma
bd250 bd250a bd250b bd250c.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE
bd250 a b c.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum rat
bd250 bd250a bd250b bd250c.pdf
isc Silicon PNP Power Transistor BD250/A/B/CDESCRIPTIONCollector Current -I = -25ACCollector-Emitter Breakdown Voltage-: V = -45V(Min)- BD250; -60V(Min)- BD250A(BR)CEO-80V(Min)- BD250B; -100V(Min)- BD250CComplement to Type BD249/A/B/CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
