BD250F Datasheet. Specs and Replacement
Type Designator: BD250F
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 125 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 40 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO218
BD250F Substitution
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BD250F datasheet
BD250, BD250A, BD250B, BD250C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the SOT-93 PACKAGE (TOP VIEW) BD249 Series 125 W at 25 C Case Temperature B 1 25 A Continuous Collector Current C 2 40 A Peak Collector Current Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute ma... See More ⇒
bd250 bd250a bd250b bd250c.pdf ![]()
SPTECH Product Specification SPTECH Silicon PNP Power Transistor BD250/A/B/C DESCRIPTION Collector Current -I = -25A C Collector-Emitter Breakdown Voltage- V = -45V(Min)- BD250; -60V(Min)- BD250A (BR)CEO -80V(Min)- BD250B; -100V(Min)- BD250C Complement to Type BD249/A/B/C APPLICATIONS Designed for use in general purpose power amplifier and switching applications ABSOLUTE ... See More ⇒
Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD250/A/B/C DESCRIPTION With TO-3PN package Complement to type BD249/A/B/C 125 W at 25 C case temperature 25 A continuous collector current PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum rat... See More ⇒
Detailed specifications: BD249E, BD249F, BD250, BD250A, BD250B, BD250C, BD250D, BD250E, BC549, BD251, BD253, BD2530, BD253A, BD253B, BD253C, BD254, BD2540
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