BD376-6 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD376-6
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar BD376-6
BD376-6 Datasheet (PDF)
bd376 bd378 bd380.pdf
BD376/378/380Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD376 - 50 V: BD378 - 75 V: BD380 - 100 V VCEO Collector-Emitter Voltage : B
bd376 bd378 bd380.pdf
BD376/378/380 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD375, BD377 and BD379 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD376 VCBO - 50 V. : BD378 - 75 V : BD380 - 100 V Collector Emitter Voltage : BD376 VCEO - 45 V1. Emitter 2.Collector 3.Base : BD378 - 60
hsbd376.pdf
PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD376 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25
bd376 bd378 bd380 .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- : hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD376 -50 VCBO Collector-Base Voltage BD378 -75
bd376 bd378 bd380.pdf
isc Silicon PNP Power Transistors BD376/378/380DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -1AFE CComplement to Type BD375/377/379Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD376 -50V Col
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
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