BD376-6 Datasheet and Replacement

BD376/378/380Medium Power Linear and Switching Applications Complement to BD375, BD377 and BD379 respectivelyTO-1261PNP Epitaxial Silicon Transistor1. Emitter 2.Collector 3.BaseAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage : BD376 - 50 V: BD378 - 75 V: BD380 - 100 V VCEO Collector-Emitter Voltage : B

BD376/378/380 PNP EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR ANDTO-126SWITCHING APPLICATIONS Complement to BD375, BD377 and BD379 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD376 VCBO - 50 V. : BD378 - 75 V : BD380 - 100 V Collector Emitter Voltage : BD376 VCEO - 45 V1. Emitter 2.Collector 3.Base : BD378 - 60

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HSBD376 APPLICATIONS Medium Power Linear switching Applications ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TjJunction Temperature 150 PCCollector DissipationTc=25

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD376/378/380 DESCRIPTION DC Current Gain- : hFE= 20(Min)@ IC= -1A Complement to Type BD375/377/379 APPLICATIONS Designed for medium power linear and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITBD376 -50 VCBO Collector-Base Voltage BD378 -75

isc Silicon PNP Power Transistors BD376/378/380DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -1AFE CComplement to Type BD375/377/379Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for medium power linear and switchingapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITBD376 -50V Col