BD434-16 Todos los transistores

 

BD434-16 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD434-16
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 22 V
   Tensión colector-emisor (Vce): 22 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar BD434-16

 

Principales características: BD434-16

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BD434-16

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output

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BD434-16

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car

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BD434-16

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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BD434-16

BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage

Otros transistores... BD433-10 , BD433-16 , BD433-25 , BD433A , BD433B , BD433C , BD434 , BD434-10 , 2SD669 , BD434-25 , BD434A , BD434B , BD434C , BD435 , BD435-10 , BD435-16 , BD435-25 .

 

 
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