BD434-16 Specs and Replacement
Type Designator: BD434-16
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36
W
Maximum Collector-Base Voltage |Vcb|: 22
V
Maximum Collector-Emitter Voltage |Vce|: 22
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 4
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Collector Capacitance (Cc): 30
pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package:
TO126
BD434-16 Transistor Equivalent Substitute - Cross-Reference Search
BD434-16 detailed specifications
9.1. Size:73K st
bd433 bd435 bd437 bd434 bd436 bd438.pdf 

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output ... See More ⇒
9.2. Size:51K st
bd433 bd434 bd435 bd436 bd437 bd438.pdf 

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car... See More ⇒
9.3. Size:160K st
bd434 bd436 bd438.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
9.4. Size:42K fairchild semi
bd434 bd436 bd438.pdf 

BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage ... See More ⇒
9.5. Size:13K samsung
bd434 bd436 bd438.pdf 

BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS Complement to BD433, BD435 and BD437 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit BD434 Collector Base Voltage VCBO - 22 V BD436 - 32 V BD438 - 45 V BD434 Collector Emitter Voltage VCES - 22 V BD436 - 32 V BD438 - 45 V BD434 Collector ... See More ⇒
9.6. Size:41K onsemi
bd434 bd436 bd438.pdf 

BD434/436/438 Medium Power Linear and Switching Applications Complement to BD433, BD435 and BD437 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD434 - 22 V BD436 - 32 V BD438 - 45 V VCES Collector-Emitter Voltage ... See More ⇒
9.7. Size:130K cdil
bd433 bd434 bd435 bd436 bd437 bd438 bd439 bd440 bd441 bd442.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD433 BD434 BD435 BD436 BD437 BD438 BD439 BD440 BD441 BD442 NPN PNP E C TO126 B Plastic Package Intended for use in Medium Power Linear and Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 UNIT BD434 BD436... See More ⇒
9.8. Size:415K jiangsu
bd434 bd436 bd438.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD434 / BD436 / BD438 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER Amplifier and Switching Applications Complement To BD433, BD435 And BD437 2. COLLECTOR 3. BASE Equivalent Circuit BD434 BD436 BD438 XX XX XX BD434,BD436,BD438=Device code Solid dot = Green moldin... See More ⇒
9.9. Size:179K lge
bd434 bd436.pdf 

BD434/436(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features 2.500 7.400 2.900 Amplifier and switching applications 1.100 7.800 1.500 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.900 3.000 4.100 Symbol Parameter Value Units 3.200 10.600 VCBO Collector-Base Voltage BD434 -22 0.000 V 11.000 0.300 BD436 -32 VCEO Collector-... See More ⇒
9.11. Size:208K inchange semiconductor
bd434.pdf 

isc Silicon PNP Power Transistor BD434 DESCRIPTION Collector-Emitter Sustaining Voltage - V = -22V(Min) CEO(SUS) Complement to type BD433 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-B... See More ⇒
9.12. Size:118K inchange semiconductor
bd434 bd436 bd438.pdf 

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD434/436/438 DESCRIPTION With TO-126 package Complement to type BD433/435/437 APPLICATIONS For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIO... See More ⇒
Detailed specifications: BD433-10
, BD433-16
, BD433-25
, BD433A
, BD433B
, BD433C
, BD434
, BD434-10
, 2SD669
, BD434-25
, BD434A
, BD434B
, BD434C
, BD435
, BD435-10
, BD435-16
, BD435-25
.
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