BD435-10 Todos los transistores

 

BD435-10 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD435-10
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 36 W
   Tensión colector-base (Vcb): 32 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Capacitancia de salida (Cc): 30 pF
   Ganancia de corriente contínua (hfe): 63
   Paquete / Cubierta: TO126

 Búsqueda de reemplazo de transistor bipolar BD435-10

 

Principales características: BD435-10

 9.1. Size:73K  st
bd433 bd435 bd437 bd434 bd436 bd438.pdf pdf_icon

BD435-10

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in 1 2 car-radio output

 9.2. Size:51K  st
bd433 bd434 bd435 bd436 bd437 bd438.pdf pdf_icon

BD435-10

BD433/5/7 BD434/6/8 COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. 1 2 The BD433 is especially suitable for use in 3 car

 9.3. Size:44K  fairchild semi
bd433 bd435 bd437.pdf pdf_icon

BD435-10

BD433/435/437 Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage BD433 22 V BD435 32 V BD437 45 V VCES Collector-Emitter Voltage BD433

 9.4. Size:57K  samsung
bd433 bd435 bd437.pdf pdf_icon

BD435-10

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING TO-126 APPLICATIONS Complement to BD434, BD436 and BD438 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage BD433 VCBO 22 V BD435 32 V BD437 45 V Collector Emitter Voltage BD433 VCES 22 V BD435 32 V 1. Emitter 2.Collector 3.Base BD437 45 V

Otros transistores... BD434 , BD434-10 , BD434-16 , BD434-25 , BD434A , BD434B , BD434C , BD435 , 2SC828 , BD435-16 , BD435-25 , BD435A , BD435B , BD435C , BD436 , BD436-10 , BD436-16 .

History: PN2715 | 2T913A

 

 
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