All Transistors. BD435-10 Datasheet

 

BD435-10 Datasheet and Replacement


   Type Designator: BD435-10
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 36 W
   Maximum Collector-Base Voltage |Vcb|: 32 V
   Maximum Collector-Emitter Voltage |Vce|: 32 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 3 MHz
   Collector Capacitance (Cc): 30 pF
   Forward Current Transfer Ratio (hFE), MIN: 63
   Noise Figure, dB: -
   Package: TO126
 

 BD435-10 Substitution

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BD435-10 Datasheet (PDF)

 9.1. Size:73K  st
bd433 bd435 bd437 bd434 bd436 bd438.pdf pdf_icon

BD435-10

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.The BD433 is especially suitable for use in12car-radio output

 9.2. Size:51K  st
bd433 bd434 bd435 bd436 bd437 bd438.pdf pdf_icon

BD435-10

BD433/5/7BD434/6/8COMPLEMENTARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPE COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are siliconepitaxial-base NPN power transistors in JedecSOT-32 plastic package, intented for use inmedium power linear and switching applications.12The BD433 is especially suitable for use in3car

 9.3. Size:44K  fairchild semi
bd433 bd435 bd437.pdf pdf_icon

BD435-10

BD433/435/437Medium Power Linear and Switching Applications Complement to BD434, BD436 and BD438 respectivelyTO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage: BD433 22 V: BD435 32 V: BD437 45 V VCES Collector-Emitter Voltage: BD433

 9.4. Size:57K  samsung
bd433 bd435 bd437.pdf pdf_icon

BD435-10

BD433/435/437 NPN EPITAXIAL SILICON TRANSISTORMEDIUM POWER LINEAR AND SWITCHINGTO-126APPLICATIONS Complement to BD434, BD436 and BD438 respectivelyABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage : BD433 VCBO 22 V: BD435 32 V: BD437 45 V Collector Emitter Voltage : BD433 VCES 22 V: BD435 32 V1. Emitter 2.Collector 3.Base: BD437 45 V

Datasheet: BD434 , BD434-10 , BD434-16 , BD434-25 , BD434A , BD434B , BD434C , BD435 , B647 , BD435-16 , BD435-25 , BD435A , BD435B , BD435C , BD436 , BD436-10 , BD436-16 .

History: BF266 | KSC2335R | GET536 | NR041H | BTC1510T3 | 38647 | ET5064

Keywords - BD435-10 transistor datasheet

 BD435-10 cross reference
 BD435-10 equivalent finder
 BD435-10 lookup
 BD435-10 substitution
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