BD539B Datasheet. Equivalente

 ..1. Size:190K  inchange semiconductor
 bd539b.pdf

isc Silicon NPN Power Transistor BD539B DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Complement to Type BD540B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING

 9.1. Size:82K  bourns
 bd539-a-b-c-d.pdf

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 Up to 120 V VCEO rating C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperature (unle

 9.2. Size:85K  power-innovations
 bd539.pdf

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 C 2 Up to 120 V VCEO rating E 3 Pin 2 is in electrical contact with the mounting base

 9.3. Size:190K  inchange semiconductor
 bd539c.pdf

isc Silicon NPN Power Transistor BD539C DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Complement to Type BD540C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATIN

 9.4. Size:190K  inchange semiconductor
 bd539a.pdf

isc Silicon NPN Power Transistor BD539A DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Complement to Type BD540A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING

 9.5. Size:191K  inchange semiconductor
 bd539d.pdf

isc Silicon NPN Power Transistor BD539D DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type BD540D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATIN

 9.6. Size:190K  inchange semiconductor
 bd539.pdf

isc Silicon NPN Power Transistor BD539 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Complement to Type BD540 APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collec