BD539B Datasheet and Replacement

isc Silicon NPN Power Transistor BD539BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD540BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Up to 120 V VCEO ratingC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperature (unle

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector Current B 1C 2 Up to 120 V VCEO ratingE 3Pin 2 is in electrical contact with the mounting base

isc Silicon NPN Power Transistor BD539CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOComplement to Type BD540CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor BD539ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOComplement to Type BD540AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor BD539DDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type BD540DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor BD539DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOComplement to Type BD540APPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collec