BD539C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BD539C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar BD539C

BD539C Datasheet (PDF)

..1. Size:190K inchange semiconductor
bd539c.pdf

isc Silicon NPN Power Transistor BD539CDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOComplement to Type BD540CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

9.1. Size:82K bourns
bd539-a-b-c-d.pdf

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Up to 120 V VCEO ratingC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperature (unle

9.2. Size:85K power-innovations
bd539.pdf

BD539, BD539A, BD539B, BD539C, BD539DNPN SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector Current B 1C 2 Up to 120 V VCEO ratingE 3Pin 2 is in electrical contact with the mounting base

9.3. Size:190K inchange semiconductor
bd539a.pdf

isc Silicon NPN Power Transistor BD539ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOComplement to Type BD540AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

9.4. Size:191K inchange semiconductor
bd539d.pdf

isc Silicon NPN Power Transistor BD539DDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOComplement to Type BD540DMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATIN

9.5. Size:190K inchange semiconductor
bd539b.pdf

isc Silicon NPN Power Transistor BD539BDESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOComplement to Type BD540BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

9.6. Size:190K inchange semiconductor
bd539.pdf

isc Silicon NPN Power Transistor BD539DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOComplement to Type BD540APPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 40 VCBOV Collec

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Liste

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