BD539C - описание и поиск аналогов

isc Silicon NPN Power Transistor BD539C DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Complement to Type BD540C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATIN

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 Up to 120 V VCEO rating C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperature (unle

BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD540 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 C 2 Up to 120 V VCEO rating E 3 Pin 2 is in electrical contact with the mounting base

isc Silicon NPN Power Transistor BD539A DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 60V(Min) (BR)CEO Complement to Type BD540A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor BD539D DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Complement to Type BD540D Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATIN

isc Silicon NPN Power Transistor BD539B DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Complement to Type BD540B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING

isc Silicon NPN Power Transistor BD539 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO Complement to Type BD540 APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collec