BD540D Todos los transistores

 

BD540D . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD540D
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 45 W
   Tensión colector-base (Vcb): 120 V
   Tensión colector-emisor (Vce): 120 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 3 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO220
 

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BD540D Datasheet (PDF)

 9.1. Size:83K  bourns
 bd540-a-b-c.pdf pdf_icon

BD540D

BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1 Customer-Specified Selections AvailableC 2E 3Pin 2 is in electrical contact with the mounting base.MDTRACAabsolute maximum ratings at 25C case temperatu

 9.2. Size:85K  power-innovations
 bd540.pdf pdf_icon

BD540D

BD540, BD540A, BD540B, BD540CPNP SILICON POWER TRANSISTORSCopyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 SeriesTO-220 PACKAGE(TOP VIEW) 45 W at 25C Case Temperature 5 A Continuous Collector CurrentB 1C 2 Customer-Specified Selections AvailableE 3Pin 2 is in electrical contact with the moun

 9.3. Size:193K  inchange semiconductor
 bd540a.pdf pdf_icon

BD540D

isc Silicon PNP Power Transistor BD540ADESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOComplement to Type BD539AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATI

 9.4. Size:193K  inchange semiconductor
 bd540.pdf pdf_icon

BD540D

isc Silicon PNP Power Transistor BD540DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = -0.5AFE CCollector-Emitter Breakdown Voltage-: V = -40V(Min)(BR)CEOComplement to Type BD539Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in medium power linear and switchingapplications.ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... BD539A , BD539B , BD539C , BD539D , BD540 , BD540A , BD540B , BD540C , 13009 , BD543 , BD543A , BD543B , BD543C , BD543D , BD544 , BD544A , BD544B .

History: BFR68

 

 
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