BD540D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD540D  📄📄 

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 45 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO220

  📄📄 Copiar 

 Búsqueda de reemplazo de BD540D

- Selecciónⓘ de transistores por parámetros

 

BD540D datasheet

 9.1. Size:83K  bourns
 bd540-a-b-c.pdf pdf_icon

BD540D

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 Customer-Specified Selections Available C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25 C case temperatu

 9.2. Size:85K  power-innovations
 bd540.pdf pdf_icon

BD540D

BD540, BD540A, BD540B, BD540C PNP SILICON POWER TRANSISTORS Copyright 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 Designed for Complementary Use with the BD539 Series TO-220 PACKAGE (TOP VIEW) 45 W at 25 C Case Temperature 5 A Continuous Collector Current B 1 C 2 Customer-Specified Selections Available E 3 Pin 2 is in electrical contact with the moun

 9.3. Size:193K  inchange semiconductor
 bd540a.pdf pdf_icon

BD540D

isc Silicon PNP Power Transistor BD540A DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Complement to Type BD539A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATI

 9.4. Size:193K  inchange semiconductor
 bd540.pdf pdf_icon

BD540D

isc Silicon PNP Power Transistor BD540 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = -0.5A FE C Collector-Emitter Breakdown Voltage- V = -40V(Min) (BR)CEO Complement to Type BD539 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in medium power linear and switching applications. ABSOLUTE MAXIMUM RATING

MOSTRAR MÁS

Otros transistores... BD539A, BD539B, BD539C, BD539D, BD540, BD540A, BD540B, BD540C, TIP3055, BD543, BD543A, BD543B, BD543C, BD543D, BD544, BD544A, BD544B