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BD644F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD644F
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 62 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1 MHz
   Ganancia de corriente contínua (hfe): 750
   Paquete / Cubierta: TO220F
 

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BD644F Datasheet (PDF)

 9.1. Size:363K  comset
 bd644-bd646-bd648-bd650-bd652.pdf pdf_icon

BD644F

SEMICONDUCTORSBD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings

 9.2. Size:193K  inchange semiconductor
 bd644.pdf pdf_icon

BD644F

isc Silicon PNP Darlington Power Transistor BD644DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CLow Saturation VoltageComplement to Type BD643Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as complementary AF push-pull output

Otros transistores... BD634 , BD635 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 , TIP41C , BD645 , BD645F , BD646 , BD646F , BD647 , BD647F , BD648 , BD648F .

History: HC5039 | MJ12004 | MQ3905R | MPS-U02 | KSA1220Y | 2N328 | 3DD13005C3D

 

 
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