All Transistors. BD644F Equivalents Search

 

BD644F Specs and Replacement


   Type Designator: BD644F
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 62 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220F

 BD644F Transistor Equivalent Substitute - Cross-Reference Search

   

BD644F detailed specifications

 9.1. Size:363K  comset
 bd644-bd646-bd648-bd650-bd652.pdf pdf_icon

BD644F

SEMICONDUCTORS BD644/646/648/650/652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. NPN complements are BD643, BD645, BD647, BD649 and BD651 ABSOLUTE MAXIMUM RATINGS Symbol Ratings... See More ⇒

 9.2. Size:193K  inchange semiconductor
 bd644.pdf pdf_icon

BD644F

isc Silicon PNP Darlington Power Transistor BD644 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Low Saturation Voltage Complement to Type BD643 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use as complementary AF push-pull output ... See More ⇒

Detailed specifications: BD634 , BD635 , BD636 , BD637 , BD638 , BD643 , BD643F , BD644 , BC547 , BD645 , BD645F , BD646 , BD646F , BD647 , BD647F , BD648 , BD648F .

Keywords - BD644F transistor specs

 BD644F cross reference
 BD644F equivalent finder
 BD644F lookup
 BD644F substitution
 BD644F replacement

 

 
Back to Top

 


 
.