BD709
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BD709
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 70
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 10
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10
MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta:
TO66
Búsqueda de reemplazo de transistor bipolar BD709
BD709
Datasheet (PDF)
..1. Size:1174K st
bd707 bd708 bd709 bd711 bd712.pdf
BD707/709/711BD708/712COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are siliconEpitaxial-Base NPN power transistors in Jedec32TO-220 plastic package. They are intented for1use in power linear and switching applications.The BD707 and BD711 compl
..2. Size:110K st
bd707 bd708 bd709 bd710 bd711 bd712.pdf
BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO
..3. Size:60K inchange semiconductor
bd707 bd709 bd711.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 DESCRIPTION With TO-220C package The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute m
..4. Size:191K inchange semiconductor
bd709.pdf
isc Silicon NPN Power Transistor BD709DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Complement to Type BD710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25
Otros transistores... 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, BC327
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.