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BD709 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD709
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 60 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO66
 

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BD709 Datasheet (PDF)

 ..1. Size:1174K  st
bd707 bd708 bd709 bd711 bd712.pdf pdf_icon

BD709

BD707/709/711BD708/712COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are siliconEpitaxial-Base NPN power transistors in Jedec32TO-220 plastic package. They are intented for1use in power linear and switching applications.The BD707 and BD711 compl

 ..2. Size:110K  st
bd707 bd708 bd709 bd710 bd711 bd712.pdf pdf_icon

BD709

BD707/709/711BD708/710/712COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATION LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe BD707, BD709, and BD711 are silicon32epitaxial-base NPN power transistors in Jedec1TO-220 plastic package, intented for use inpower linear and switching applications.TO

 ..3. Size:60K  inchange semiconductor
bd707 bd709 bd711.pdf pdf_icon

BD709

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 DESCRIPTION With TO-220C package The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute m

 ..4. Size:191K  inchange semiconductor
bd709.pdf pdf_icon

BD709

isc Silicon NPN Power Transistor BD709DESCRIPTIONDC Current Gain -: h = 40(Min.)@ I = 0.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min.)CEO(SUS)Complement to Type BD710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power linear and switching applications.ABSOLUTE MAXIMUM RATINGS(T =25

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: 2N1502 | 2SC1870 | MJ10042

 

 
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