BD709 PDF and Equivalents Search

 

BD709 Specs and Replacement


   Type Designator: BD709
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 70 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO66
 

 BD709 Substitution

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BD709 datasheet

 ..1. Size:1174K  st
bd707 bd708 bd709 bd711 bd712.pdf pdf_icon

BD709

BD707/709/711 BD708/712 COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709 and BD711 are silicon Epitaxial-Base NPN power transistors in Jedec 3 2 TO-220 plastic package. They are intented for 1 use in power linear and switching applications. The BD707 and BD711 compl... See More ⇒

 ..2. Size:110K  st
bd707 bd708 bd709 bd710 bd711 bd712.pdf pdf_icon

BD709

BD707/709/711 BD708/710/712 COMPLEMENTARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BD707, BD709, and BD711 are silicon 3 2 epitaxial-base NPN power transistors in Jedec 1 TO-220 plastic package, intented for use in power linear and switching applications. TO... See More ⇒

 ..3. Size:60K  inchange semiconductor
bd707 bd709 bd711.pdf pdf_icon

BD709

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD707 BD709 BD711 DESCRIPTION With TO-220C package The BD707 and BD711are respectively complement to type BD708 and BD712 APPLICATIONS Intented for use in power linear and switching applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute m... See More ⇒

 ..4. Size:191K  inchange semiconductor
bd709.pdf pdf_icon

BD709

isc Silicon NPN Power Transistor BD709 DESCRIPTION DC Current Gain - h = 40(Min.)@ I = 0.5A FE C Collector-Emitter Sustaining Voltage- V = 80V(Min.) CEO(SUS) Complement to Type BD710 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒

Detailed specifications: BD700 , BD700A , BD701 , BD702 , BD705 , BD706 , BD707 , BD708 , D209L , BD710 , BD711 , BD712 , BD719 , BD720 , BD721 , BD722 , BD723 .

History: BD829 | 2SD1466

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