BD722 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD722

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO126

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BD722 datasheet

 ..1. Size:190K  inchange semiconductor
 bd722.pdf pdf_icon

BD722

isc Silicon PNP Power Transistor BD722 DESCRIPTION DC Current Gain- h = 40@ I = -0.5A FE C Collector-Emitter Breakdown Voltage - V = -80V(Min) (BR)CEO Complement to type BD721 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RAT

 ..2. Size:193K  inchange semiconductor
 bd720 bd722 bd724 bd726.pdf pdf_icon

BD722

isc Silicon PNP Power Transistor BD720/722/724/726 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -2A FE C Complement to Type BD719/721/723/725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

Otros transistores... BD708, BD709, BD710, BD711, BD712, BD719, BD720, BD721, TIP2955, BD723, BD724, BD725, BD726, BD733, BD734, BD735, BD736