BD722 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD722
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
BD722 Transistor Equivalent Substitute - Cross-Reference Search
BD722 Datasheet (PDF)
bd722.pdf
isc Silicon PNP Power Transistor BD722DESCRIPTIONDC Current Gain-: h = 40@ I = -0.5AFE CCollector-Emitter Breakdown Voltage -: V = -80V(Min)(BR)CEOComplement to type BD721Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applications.ABSOLUTE MAXIMUM RAT
bd720 bd722 bd724 bd726.pdf
isc Silicon PNP Power Transistor BD720/722/724/726DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -2AFE CComplement to Type BD719/721/723/725Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , BD777 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
