BD722 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD722
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
BD722 Transistor Equivalent Substitute - Cross-Reference Search
BD722 Datasheet (PDF)
bd722.pdf
isc Silicon PNP Power Transistor BD722DESCRIPTIONDC Current Gain-: h = 40@ I = -0.5AFE CCollector-Emitter Breakdown Voltage -: V = -80V(Min)(BR)CEOComplement to type BD721Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applications.ABSOLUTE MAXIMUM RAT
bd720 bd722 bd724 bd726.pdf
isc Silicon PNP Power Transistor BD720/722/724/726DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -2AFE CComplement to Type BD719/721/723/725Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
