BD722 Specs and Replacement

Type Designator: BD722

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

 BD722 Substitution

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BD722 datasheet

 ..1. Size:190K  inchange semiconductor

 bd722.pdf pdf_icon

BD722

isc Silicon PNP Power Transistor BD722 DESCRIPTION DC Current Gain- h = 40@ I = -0.5A FE C Collector-Emitter Breakdown Voltage - V = -80V(Min) (BR)CEO Complement to type BD721 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RAT... See More ⇒

 ..2. Size:193K  inchange semiconductor

 bd720 bd722 bd724 bd726.pdf pdf_icon

BD722

isc Silicon PNP Power Transistor BD720/722/724/726 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -2A FE C Complement to Type BD719/721/723/725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

Detailed specifications: BD708, BD709, BD710, BD711, BD712, BD719, BD720, BD721, TIP2955, BD723, BD724, BD725, BD726, BD733, BD734, BD735, BD736

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