BD726 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD726

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 36 W

Tensión colector-base (Vcb): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 3 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO126

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BD726 datasheet

 ..1. Size:193K  inchange semiconductor
 bd720 bd722 bd724 bd726.pdf pdf_icon

BD726

isc Silicon PNP Power Transistor BD720/722/724/726 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -2A FE C Complement to Type BD719/721/723/725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 ..2. Size:209K  inchange semiconductor
 bd726.pdf pdf_icon

BD726

isc Silicon PNP Power Transistor BD726 DESCRIPTION DC Current Gain- h = 40@ I = -0.5A FE C Collector-Emitter Breakdown Voltage - V = -120V(Min) (BR)CEO Complement to type BD725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RA

Otros transistores... BD712, BD719, BD720, BD721, BD722, BD723, BD724, BD725, BC556, BD733, BD734, BD735, BD736, BD737, BD738, BD743, BD743A