BD726 Datasheet and Replacement
Type Designator: BD726
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 36 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO126
BD726 Substitution
BD726 Datasheet (PDF)
bd720 bd722 bd724 bd726.pdf

isc Silicon PNP Power Transistor BD720/722/724/726DESCRIPTIONDC Current Gain-: h = 20(Min)@ I = -2AFE CComplement to Type BD719/721/723/725Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
bd726.pdf

isc Silicon PNP Power Transistor BD726DESCRIPTIONDC Current Gain-: h = 40@ I = -0.5AFE CCollector-Emitter Breakdown Voltage -: V = -120V(Min)(BR)CEOComplement to type BD725Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in audio output and general purposeamplifier applications.ABSOLUTE MAXIMUM RA
Datasheet: BD712 , BD719 , BD720 , BD721 , BD722 , BD723 , BD724 , BD725 , BC639 , BD733 , BD734 , BD735 , BD736 , BD737 , BD738 , BD743 , BD743A .
History: MQ5133 | KSC1675Y | DTS2001 | P633567 | CSC2458 | 2SC1654N | DTC123JET1G
Keywords - BD726 transistor datasheet
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History: MQ5133 | KSC1675Y | DTS2001 | P633567 | CSC2458 | 2SC1654N | DTC123JET1G



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