BD726 Specs and Replacement

Type Designator: BD726

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 36 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 3 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO126

 BD726 Substitution

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BD726 datasheet

 ..1. Size:193K  inchange semiconductor

bd720 bd722 bd724 bd726.pdf pdf_icon

BD726

isc Silicon PNP Power Transistor BD720/722/724/726 DESCRIPTION DC Current Gain- h = 20(Min)@ I = -2A FE C Complement to Type BD719/721/723/725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒

 ..2. Size:209K  inchange semiconductor

bd726.pdf pdf_icon

BD726

isc Silicon PNP Power Transistor BD726 DESCRIPTION DC Current Gain- h = 40@ I = -0.5A FE C Collector-Emitter Breakdown Voltage - V = -120V(Min) (BR)CEO Complement to type BD725 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RA... See More ⇒

Detailed specifications: BD712, BD719, BD720, BD721, BD722, BD723, BD724, BD725, BC556, BD733, BD734, BD735, BD736, BD737, BD738, BD743, BD743A

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