BD744 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon PNP Power Transistor BD744DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier

BD744, BD744A, BD744B, BD744CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 SeriesTO-220 PACKAGE(TOP VIEW) 90 W at 25C Case Temperature 15 A Continuous Collector CurrentB 1 20 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maxim

isc Silicon PNP Power Transistor BD744ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie

isc Silicon PNP Power Transistor BD744BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie

isc Silicon PNP Power Transistor BD744CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifi