BD744. Аналоги и основные параметры

Наименование производителя: BD744

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 90 W

Макcимально допустимое напряжение коллектор-база (Ucb): 50 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 15 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 5 MHz

Статический коэффициент передачи тока (hFE): 20

Корпус транзистора: TO220

 Аналоги (замена) для BD744

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BD744 даташит

 ..1. Size:212K  inchange semiconductor
 bd744.pdf pdf_icon

BD744

isc Silicon PNP Power Transistor BD744 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -45V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD743 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier

 0.1. Size:86K  bourns
 bd744-a-b-c.pdf pdf_icon

BD744

BD744, BD744A, BD744B, BD744C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 Series TO-220 PACKAGE (TOP VIEW) 90 W at 25 C Case Temperature 15 A Continuous Collector Current B 1 20 A Peak Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maxim

 0.2. Size:215K  inchange semiconductor
 bd744a.pdf pdf_icon

BD744

isc Silicon PNP Power Transistor BD744A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD743A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifie

 0.3. Size:213K  inchange semiconductor
 bd744b.pdf pdf_icon

BD744

isc Silicon PNP Power Transistor BD744B DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Collector Power Dissipation- P = 90W@ I = 25 C C 15A Continuous Collector Current Complement to Type BD743B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifie

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: BD738, BD743, BD743A, BD743B, BD743C, BD743D, BD743E, BD743F, BD136, BD744A, BD744B, BD744C, BD744D, BD744E, BD744F, BD745, BD745A