BD744 Datasheet, Equivalent, Cross Reference Search
Type Designator: BD744
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 5 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO220
BD744 Transistor Equivalent Substitute - Cross-Reference Search
BD744 Datasheet (PDF)
bd744.pdf
isc Silicon PNP Power Transistor BD744DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -45V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier
bd744-a-b-c.pdf
BD744, BD744A, BD744B, BD744CPNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD743 SeriesTO-220 PACKAGE(TOP VIEW) 90 W at 25C Case Temperature 15 A Continuous Collector CurrentB 1 20 A Peak Collector CurrentC 2 Customer-Specified Selections Available 3EPin 2 is in electrical contact with the mounting base.MDTRACAabsolute maxim
bd744a.pdf
isc Silicon PNP Power Transistor BD744ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
bd744b.pdf
isc Silicon PNP Power Transistor BD744BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifie
bd744c.pdf
isc Silicon PNP Power Transistor BD744CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -100V(Min)(BR)CEOCollector Power Dissipation-: P = 90W@ I = 25C C15A Continuous Collector CurrentComplement to Type BD743CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifi
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
