BD750 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD750

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 15

Encapsulados: TO3

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BD750 datasheet

 ..1. Size:212K  inchange semiconductor
 bd750 bd750a.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- V = -90V(Min)- BD750 CEO(SUS) = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MA

 ..2. Size:75K  inchange semiconductor
 bd750 bd750a .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 0.1. Size:114K  inchange semiconductor
 bd750b bd750c .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

 0.2. Size:211K  inchange semiconductor
 bd750b bd750c.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- V = -100V(Min)- BD751B CEO(SUS) = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUT

MOSTRAR MÁS

Otros transistores... BD745F, BD746, BD746A, BD746B, BD746C, BD746D, BD746E, BD746F, C5198, BD750A, BD750B, BD750C, BD751, BD751A, BD751B, BD751C, BD775