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BD750 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BD750
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 200 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 20 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3
 

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BD750 Datasheet (PDF)

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bd750 bd750a.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750/750ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = -90V(Min)- BD750CEO(SUS)= -120V(Min)- BD750AHigh Power DissipationComplement to Type BD751/751AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MA

 ..2. Size:75K  inchange semiconductor
bd750 bd750a .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)

 0.1. Size:114K  inchange semiconductor
bd750b bd750c .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

 0.2. Size:211K  inchange semiconductor
bd750b bd750c.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750B/750CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = -100V(Min)- BD751BCEO(SUS)= -130V(Min)- BD751CHigh Power DissipationComplement to Type BD751B/751CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUT

Otros transistores... BD745F , BD746 , BD746A , BD746B , BD746C , BD746D , BD746E , BD746F , 13007 , BD750A , BD750B , BD750C , BD751 , BD751A , BD751B , BD751C , BD775 .

History: 2SA2077 | HP147TS | 2SC3249

 

 
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