All Transistors. BD750 Datasheet

 

BD750 Datasheet and Replacement


   Type Designator: BD750
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 20 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 4 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
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BD750 Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
 bd750 bd750a.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750/750ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = -90V(Min)- BD750CEO(SUS)= -120V(Min)- BD750AHigh Power DissipationComplement to Type BD751/751AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MA

 ..2. Size:75K  inchange semiconductor
 bd750 bd750a .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750/750A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -90V(Min)- BD750 = -120V(Min)- BD750A High Power Dissipation Complement to Type BD751/751A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)

 0.1. Size:114K  inchange semiconductor
 bd750b bd750c .pdf pdf_icon

BD750

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors BD750B/750C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C High Power Dissipation Complement to Type BD751B/751C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25

 0.2. Size:211K  inchange semiconductor
 bd750b bd750c.pdf pdf_icon

BD750

isc Silicon PNP Power Transistors BD750B/750CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = -100V(Min)- BD751BCEO(SUS)= -130V(Min)- BD751CHigh Power DissipationComplement to Type BD751B/751CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUT

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