BD751A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD751A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 200 W

Tensión colector-base (Vcb): 130 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO3

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BD751A datasheet

 ..1. Size:165K  cn sptech
 bd751 bd751a.pdf pdf_icon

BD751A

SPTECH Product Specification SPTECH Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 ..2. Size:113K  inchange semiconductor
 bd751 bd751a .pdf pdf_icon

BD751A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY

 ..3. Size:207K  inchange semiconductor
 bd751 bd751a.pdf pdf_icon

BD751A

isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXI

 9.1. Size:207K  inchange semiconductor
 bd751b bd751c.pdf pdf_icon

BD751A

isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- BD751B CEO(SUS) = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE

MOSTRAR MÁS

Otros transistores... BD746D, BD746E, BD746F, BD750, BD750A, BD750B, BD750C, BD751, A1015, BD751B, BD751C, BD775, BD776, BD777, BD778, BD779, BD780