BD751A Datasheet, Equivalent, Cross Reference Search
Type Designator: BD751A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 130 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 20 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package: TO3
BD751A Transistor Equivalent Substitute - Cross-Reference Search
BD751A Datasheet (PDF)
bd751 bd751a.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
bd751 bd751a .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SY
bd751 bd751a.pdf
isc Silicon NPN Power Transistors BD751/751ADESCRIPTION Collector-Emitter Sustaining Voltage-: V = 90V(Min)- BD751CEO(SUS)= 120V(Min)- BD751AHigh Power DissipationComplement to Type BD750/750AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE MAXI
bd751b bd751c.pdf
isc Silicon NPN Power Transistors BD751B/751CDESCRIPTION Collector-Emitter Sustaining Voltage-: V = 100V(Min)- BD751BCEO(SUS)= 130V(Min)- BD751CHigh Power DissipationComplement to Type BD750B/750CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and high power amplifierapplications.ABSOLUTE
bd751b bd751c .pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONSDesigned for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
