BD751B Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD751B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 250 W

Tensión colector-base (Vcb): 110 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Ganancia de corriente contínua (hFE): 25

Encapsulados: TO3

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BD751B datasheet

 ..1. Size:207K  inchange semiconductor
 bd751b bd751c.pdf pdf_icon

BD751B

isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- BD751B CEO(SUS) = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE

 ..2. Size:113K  inchange semiconductor
 bd751b bd751c .pdf pdf_icon

BD751B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 )

 9.1. Size:165K  cn sptech
 bd751 bd751a.pdf pdf_icon

BD751B

SPTECH Product Specification SPTECH Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.2. Size:113K  inchange semiconductor
 bd751 bd751a .pdf pdf_icon

BD751B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY

MOSTRAR MÁS

Otros transistores... BD746E, BD746F, BD750, BD750A, BD750B, BD750C, BD751, BD751A, 13007, BD751C, BD775, BD776, BD777, BD778, BD779, BD780, BD785