BD751B Specs and Replacement

Type Designator: BD751B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 4 MHz

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO3

 BD751B Substitution

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BD751B datasheet

 ..1. Size:207K  inchange semiconductor

bd751b bd751c.pdf pdf_icon

BD751B

isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min)- BD751B CEO(SUS) = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE ... See More ⇒

 ..2. Size:113K  inchange semiconductor

bd751b bd751c .pdf pdf_icon

BD751B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751B/751C DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C High Power Dissipation Complement to Type BD750B/750C APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) ... See More ⇒

 9.1. Size:165K  cn sptech

bd751 bd751a.pdf pdf_icon

BD751B

SPTECH Product Specification SPTECH Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 90V(Min)- BD751 CEO(SUS) = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒

 9.2. Size:113K  inchange semiconductor

bd751 bd751a .pdf pdf_icon

BD751B

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD751/751A DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A High Power Dissipation Complement to Type BD750/750A APPLICATIONS Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SY... See More ⇒

Detailed specifications: BD746E, BD746F, BD750, BD750A, BD750B, BD750C, BD751, BD751A, 13007, BD751C, BD775, BD776, BD777, BD778, BD779, BD780, BD785

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