BD895A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD895A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 45 V

Tensión colector-emisor (Vce): 45 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220

 Búsqueda de reemplazo de BD895A

- Selecciónⓘ de transistores por parámetros

 

BD895A datasheet

 ..1. Size:120K  inchange semiconductor
 bd895a bd897a bd899a.pdf pdf_icon

BD895A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

 ..2. Size:212K  inchange semiconductor
 bd895a.pdf pdf_icon

BD895A

isc Silicon NPN Darlington Power Transistor BD895A DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD896A Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

 9.1. Size:120K  jmnic
 bd895.pdf pdf_icon

BD895A

Power Transistors www.jmnic.com BD895 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage 45 V VCEO Collector to emitter voltage 45 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A

 9.2. Size:212K  inchange semiconductor
 bd895.pdf pdf_icon

BD895A

isc Silicon NPN Darlington Power Transistor BD895 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 45V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = 3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD896 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPL

MOSTRAR MÁS

Otros transistores... BD866, BD875, BD876, BD877, BD878, BD879, BD880, BD895, S9014, BD896, BD896A, BD897, BD897A, BD898, BD898A, BD899, BD899A