All Transistors. BD895A Datasheet

 

BD895A Datasheet, Equivalent, Cross Reference Search


   Type Designator: BD895A
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 45 V
   Maximum Collector-Emitter Voltage |Vce|: 45 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 750
   Noise Figure, dB: -
   Package: TO220

 BD895A Transistor Equivalent Substitute - Cross-Reference Search

   

BD895A Datasheet (PDF)

 ..1. Size:120K  inchange semiconductor
bd895a bd897a bd899a.pdf

BD895A
BD895A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895A/897A/899A DESCRIPTION With TO-220C package Complement to type BD896A/898A/900A DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

 ..2. Size:212K  inchange semiconductor
bd895a.pdf

BD895A
BD895A

isc Silicon NPN Darlington Power Transistor BD895ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD896AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

 9.1. Size:120K  jmnic
bd895.pdf

BD895A

Power Transistors www.jmnic.comBD895 Silicon PNP Transistors Features B C E With TO-220 package With general-purpose and amplifier applications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 45 V VCEO Collector to emitter voltage 45 V VEBO Emitter to base voltage 5.0 V IB Base collector current IC Collector current 8.0 A

 9.2. Size:212K  inchange semiconductor
bd895.pdf

BD895A
BD895A

isc Silicon NPN Darlington Power Transistor BD895DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 45V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = 3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD896Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPL

 9.3. Size:121K  inchange semiconductor
bd895 bd897 bd899 bd901.pdf

BD895A
BD895A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD895/897/899/901 DESCRIPTION With TO-220C package Complement to type BD896/898/900/902 DARLINGTON APPLICATIONS For use in output stages in audio equipment ,general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: FHT8050G-ME

 

 
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