BD900 Todos los transistores

 

BD900 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BD900

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 70 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 1 MHz

Ganancia de corriente contínua (hFE): 750

Encapsulados: TO220

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BD900 datasheet

 ..1. Size:121K  inchange semiconductor
bd896 bd898 bd900 bd902.pdf pdf_icon

BD900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3

 ..2. Size:212K  inchange semiconductor
bd900.pdf pdf_icon

BD900

isc Silicon PNP Darlington Power Transistor BD900 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -3A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD899 Minimum Lot-to-Lot variations for robust device performance and reliable operation AP

 0.1. Size:120K  inchange semiconductor
bd896a bd898a bd900a.pdf pdf_icon

BD900

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Em

 0.2. Size:212K  inchange semiconductor
bd900a.pdf pdf_icon

BD900

isc Silicon PNP Darlington Power Transistor BD900A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO High DC Current Gain h = 750(Min) @I = -4A FE C Collector Power Dissipation- P = 70W@ T = 25 C C 8 A Continuous Collector Current Complement to Type BD899A Minimum Lot-to-Lot variations for robust device performance and reliable operation

Otros transistores... BD896 , BD896A , BD897 , BD897A , BD898 , BD898A , BD899 , BD899A , B772 , BD900A , BD901 , BD902 , BD905 , BD906 , BD907 , BD908 , BD909 .

History: BD901 | BD900A

 

 

 


History: BD901 | BD900A

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