BD900 - параметры, поиск аналогов, даташиты транзистора

BD900 Datasheet (PDF)

..1. Size:121K inchange semiconductor
bd896 bd898 bd900 bd902.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896/898/900/902 DESCRIPTION With TO-220C package Complement to type BD895/897/899/901 DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3

..2. Size:212K inchange semiconductor
bd900.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BD900DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -3AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAP

0.1. Size:120K inchange semiconductor
bd896a bd898a bd900a.pdf pdf_icon

Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD896A/898A/900A DESCRIPTION With TO-220C package Complement to type BD895A/897A/901A DARLINGTON APPLICATIONS For use in output stages in audio equipment, general amplifier,and analogue switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Em

0.2. Size:212K inchange semiconductor
bd900a.pdf pdf_icon

isc Silicon PNP Darlington Power Transistor BD900ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOHigh DC Current Gain: h = 750(Min) @I = -4AFE CCollector Power Dissipation-: P = 70W@ T = 25C C8 A Continuous Collector CurrentComplement to Type BD899AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operation

Другие транзисторы... BD896 , BD896A , BD897 , BD897A , BD898 , BD898A , BD899 , BD899A , S8550 , BD900A , BD901 , BD902 , BD905 , BD906 , BD907 , BD908 , BD909 .